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Proceedings Paper

Piezoelectric effects on the dynamics of optical transitions in GaN/AlxGa1-xN multiple quantum wells
Author(s): Hyeon S. Kim; Jing Yu Lin; Hongxing Jiang; Weng W. Chow; Andrei Botchkarev; Hadis Morkoc
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Paper Abstract

Piezoelectric effects on the dynamics of optical transitions in GaN/AlGaN multiple quantum wells (MQWs) have been investigated by picosecond time-resolved photoluminescence (TRPL) measurements. TRPL spectra of the 40 angstroms well MQWs reveal that the excitonic transition is in fact blueshifted at early delay times due to quantum confinement of carriers. The spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. By comparing experimental and calculation results a low limit of the piezoelectric field strength of about 460 kV/cm in GaN/Al0.15Ga0.85N MQWs and the electron and hole wave functions have been obtained. Temporal response of the excitonic transitions of the GaN/AlGaN MQWs depends on the well width. The recombination lifetimes of the 20 angstroms well MQWs decreases monotonously with an increase of emission energy. However, emission energy dependence of the lifetime on 30, 40, 50 angstroms well MQWs which shows a similar behavior as the cw PL spectrum, is quite different from that of 20 angstroms well MQWs. It has been demonstrated that the results described above are due to the presence of the piezoelectric field in the GaN wells of GaN/AlGaN MQWs subject to elastic strain together with screening of the photoexcited carriers and Coulomb interaction.

Paper Details

Date Published: 24 May 1999
PDF: 9 pages
Proc. SPIE 3624, Ultrafast Phenomena in Semiconductors III, (24 May 1999); doi: 10.1117/12.349295
Show Author Affiliations
Hyeon S. Kim, Kansas State Univ. (South Korea)
Jing Yu Lin, Kansas State Univ. (United States)
Hongxing Jiang, Kansas State Univ. (United States)
Weng W. Chow, Sandia National Labs. (United States)
Andrei Botchkarev, Virginia Commonwealth Univ. (United States)
Hadis Morkoc, Virginia Commonwealth Univ. (United States)


Published in SPIE Proceedings Vol. 3624:
Ultrafast Phenomena in Semiconductors III
Kong-Thon F. Tsen, Editor(s)

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