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Proceedings Paper

Femtosecond spectroscopy in GaN with tunable UV pulses
Author(s): Hong Ye; Gary W. Wicks; Philippe M. Fauchet
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Paper Abstract

The hot electron relaxation dynamics is studied in n-type GaN films grown on sapphire by molecular beam epitaxy. A novel femtosecond pump-probe technique is used in which the electrons are excited by an infrared pump and the carrier dynamics are monitored by a tunable near UV probe. Complex transients, showing bleaching and induced absorption, are observed. The data are fitted by a model in which the LO- phonon emission is the dominant energy relaxation process. The LO-phonon emission time is measured to be 0.2 ps. Above- bandgap pump-probe experiments, in which the electrons are excited by a near ultraviolet (UV) pump from the valence band and probed by a tunable near UV pulse are also performed. They show that the carrier dynamics vary with the probe wavelengths.

Paper Details

Date Published: 24 May 1999
PDF: 10 pages
Proc. SPIE 3624, Ultrafast Phenomena in Semiconductors III, (24 May 1999); doi: 10.1117/12.349294
Show Author Affiliations
Hong Ye, Univ. of Rochester (United States)
Gary W. Wicks, The Institute of Optics/Univ. of Rochester (United States)
Philippe M. Fauchet, Univ. of Rochester (United States)

Published in SPIE Proceedings Vol. 3624:
Ultrafast Phenomena in Semiconductors III
Kong-Thon F. Tsen, Editor(s)

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