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Proceedings Paper

Carrier and exciton dynamics in In0.15Ga0.85 NGaN multiple quantum well structures
Author(s): Bo Monemar; Peder Bergman; Galina R. Pozina; J. Dalfors; B. E. Sernelius; Per Olof Holtz; Hiroshi Amano; Isamu Akasaki
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Paper Abstract

We present a study of the radiative recombination in In0.15Ga0.85N/GaN multiple quantum well samples, where the conditions of growth of the InGaN quantum layers were varied in terms of growth temperature and donor doping. The photoluminescence peak position varies strongly (over a range as large as 0.3 eV) with excitation intensity, with donor doping as well as with delay time after pulsed excitation. The peak position is mainly determined by the Stark effect induced by the piezoelectric field. In addition potential fluctuations play an important role, and largely determine the width of the emission. These potential fluctuations may be as large as 0.2 eV in the present samples. Screening effects from donor electrons and excited electron-hole pairs are important, and account for a large part of the spectral shift with donor doping, with excitation intensity and with delay time after pulsed excitation (shifts up to 0.2 eV). We suggest a dominant role of 2D electron- and donor screening in this case, predicting that rather strong localization potentials of short range (of the order 100 angstroms) are present. The possibility that excitons as well as shallow donors are impact ionized by electrons in these rather strong lateral potential fluctuations present at this In composition is discussed in connection with the long decay times observed at all temperatures.

Paper Details

Date Published: 24 May 1999
PDF: 11 pages
Proc. SPIE 3624, Ultrafast Phenomena in Semiconductors III, (24 May 1999); doi: 10.1117/12.349292
Show Author Affiliations
Bo Monemar, Linkoeping Univ. (Sweden)
Peder Bergman, Linkoeping Univ. (Sweden)
Galina R. Pozina, Linkoeping Univ. (Sweden)
J. Dalfors, Linkoeping Univ. (Sweden)
B. E. Sernelius, Linkoeping Univ. (Sweden)
Per Olof Holtz, Linkoeping Univ. (Sweden)
Hiroshi Amano, Meijo Univ. (Japan)
Isamu Akasaki, Meijo Univ. (Japan)

Published in SPIE Proceedings Vol. 3624:
Ultrafast Phenomena in Semiconductors III
Kong-Thon F. Tsen, Editor(s)

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