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Proceedings Paper

Steady-state and transient defect populations in KH2PO4 subsequent to high-fluence laser irradiation
Author(s): Stavros G. Demos; Michael C. Staggs; Harry B. Radousky; James J. De Yoreo
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Paper Abstract

Microscopic fluorescence imaging and time-resolved Raman scattering are employed to investigate the effect of high power 355 nm laser irradiation on preexisting and transient defect populations in KH2PO4. Defect clusters in the bulk of KDP crystals are imaged with 1 micron spatial resolution using their NIR emission. The intensity of the emission clusters varies widely within the image field. The exposure of the crystal at high power 355 nm, 3 ns laser irradiation leads to a reduction of the number of observed optically active centers. In addition, time resolved Raman scattering was employed to study the transient generation of defects during high power 355 nm laser irradiation.

Paper Details

Date Published: 26 May 1999
PDF: 7 pages
Proc. SPIE 3610, Laser Material Crystal Growth and Nonlinear Materials and Devices, (26 May 1999); doi: 10.1117/12.349237
Show Author Affiliations
Stavros G. Demos, Lawrence Livermore National Lab. (United States)
Michael C. Staggs, Lawrence Livermore National Lab. (United States)
Harry B. Radousky, Lawrence Livermore National Lab. (United States)
James J. De Yoreo, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 3610:
Laser Material Crystal Growth and Nonlinear Materials and Devices
Kathleen I. Schaffers; Lawrence E. Myers, Editor(s)

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