Proceedings PaperHigh-performance UV and DUV lenses for projection-lithographic generation of submicron patterns down to 0.4 um
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Manufacturing of modern microelectronic circuits requires projection- lithographic generation of submicron patterns by using high-aperture diffraction-limited UV- and DUV-lenses. Realized image quality of such high-performance leiises is mainly determined by the control of the extremly narrowed fabrication tolerances by new developed special high technologies for production and measurement of such lenses1. Contactless optical precision measurement of surfacy topography, thickness, distances, and decentring of optical elements , computer-controlled correction polishing" , manufacturing of nanometer-asperic surfaces by CNC-correction polishing or by ion-beam etching, computer-assisted assembly , wave- front analysis on the basis of measurement of geometrical-optical beam aberrations, and image quality testing with near-coherent illumination are such new techniques. The correction of such lenses is more difficult because the available optical media are limited to those which sufficiently good transmission in the UV resp. DUV region. Optical media used in DUV-lenses are fused silica glass, calcium or barium fluoride, and eventually fluorphosphate crown glass. This media restriction leads to an increase in number of lenses, constructional length, and technological difficulties in the manufacturing.