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Proceedings Paper

Optical band-elimination filter made of optically active uniaxial crystal of AgGaSe2 for A1GaAs semiconductor laser
Author(s): Hiromichi Horinaka; Nobuyuki Yamamoto
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Paper Abstract

The optical band-elimination filter (OBEF) with narrow band is constructed from two polarizers and an optically active uniaxial crystal of AgGaSe2 for the application of Raman spectroscopy. Experimental results show that this OBEF cap eliminate sufficiently the emission of A1GaAs semiconductor laser. 1 .

Paper Details

Date Published: 1 July 1990
PDF: 1 pages
Proc. SPIE 1319, Optics in Complex Systems, (1 July 1990); doi: 10.1117/12.34869
Show Author Affiliations
Hiromichi Horinaka, Univ. of Osaka Prefecture (Japan)
Nobuyuki Yamamoto, Univ. of Osaka Prefecture (Japan)

Published in SPIE Proceedings Vol. 1319:
Optics in Complex Systems
F. Lanzl; H.-J. Preuss; G. Weigelt, Editor(s)

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