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Proceedings Paper

Multiple quantum well self electro-optic effect devices for optoelectronic smart pixels
Author(s): Hongda Chen; Rong Han Wu; Zhibiao Chen; Yi H. Zhang; Yun Du; Qing-Ming Zeng; Xian-Jie Li; Yimo Zhang; Ge Zhou; Feng Hua
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Paper Abstract

The investigations on GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays for optoelectronic smart pixels are reported. The hybrid integration of GaAs/AlGaAs multiple quantum well devices flip-chip bonding directly over 1 micrometers silicon CMOS circuits are demonstrated. The GaAs/AlGaAs multiple quantum well devices are designed for 850 nm operation. The measurement result under applied biases show the good optoelectronic characteristics of elements in SEED arrays. The 4 X 4 optoelectronic crossbar structure consisting of hybrid CMOS- SEED smart pixels have been designed, which could be potentially used in optical interconnects for multiple processors.

Paper Details

Date Published: 30 April 1999
PDF: 9 pages
Proc. SPIE 3631, Optoelectronic Integrated Circuits and Packaging III, (30 April 1999); doi: 10.1117/12.348324
Show Author Affiliations
Hongda Chen, Institute of Semiconductors (China)
Rong Han Wu, Institute of Semiconductors (China)
Zhibiao Chen, Institute of Semiconductors (China)
Yi H. Zhang, Institute of Semiconductors (China)
Yun Du, Institute of Semiconductors (China)
Qing-Ming Zeng, Hebei Semiconductors Research Institute (China)
Xian-Jie Li, Hebei Semiconductors Research Institute (China)
Yimo Zhang, Tianjin Univ. (China)
Ge Zhou, Tianjin Univ. (China)
Feng Hua, Tianjin Univ. (China)


Published in SPIE Proceedings Vol. 3631:
Optoelectronic Integrated Circuits and Packaging III
Michael R. Feldman; Michael R. Feldman; James G. Grote; Mary K. Hibbs-Brenner, Editor(s)

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