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Proceedings Paper

Simulation of integrated silicon-based Ge/Si quantum well and superlattice infrared photodetectors
Author(s): Richard A. Soref; Lionel R. Friedman; Michael J. Noble; Darlene Schwall; L. R. Ram-Mohan
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Paper Abstract

We have performed quantum-mechanical analyses of strain- symmetrized Ge/Si QWIPs grown upon a realized buffer layer of Si0.4Ge0.6 on Si. The multi-quantum-well (MQW) QWIP has 50 angstrom-thick compressively strained p-doped Ge quantum wells and 200 angstrom-thick tensile-strained Si- rich SiGe barriers. This MQW allows shorter-wavelength IR sensing than prior-art unbuffered Si0.64Ge0.36/Si asymmetrically strained QWIPs because the valence band offsets are approximately 3x larger. We predict normal- incidence higher-temperature operation over the 1.7-to-3.8- micrometers wavelength band using the bound-to-bound and bound-to- continuum transitions HH1-SO1 and HH1-SO-C respectively. We expect that the p-i-p Ge/Si MQW pixels analyzed here can be fashioned into 2D imaging arrays, and that the arrays can be integrated monolithically with Si readout circuity. We also anticipate that multi-spectral IR imaging will be feasible by the technique of vertical epitaxial stacking of 'sub- QWIPs' within each pixel - where each sub-QWIP has a narrowband spectral response that differs from its neighbor's, and each sub-QWIP's electrical readout current is independent of its neighbor's.

Paper Details

Date Published: 30 April 1999
PDF: 9 pages
Proc. SPIE 3631, Optoelectronic Integrated Circuits and Packaging III, (30 April 1999); doi: 10.1117/12.348302
Show Author Affiliations
Richard A. Soref, Air Force Research Lab. (United States)
Lionel R. Friedman, Air Force Research Lab. (United States)
Michael J. Noble, Air Force Research Lab. (United States)
Darlene Schwall, Air Force Research Lab. (United States)
L. R. Ram-Mohan, Worcester Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 3631:
Optoelectronic Integrated Circuits and Packaging III
Michael R. Feldman; Michael R. Feldman; James G. Grote; Mary K. Hibbs-Brenner, Editor(s)

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