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Proceedings Paper

Photon echo in direct-gap semiconductors
Author(s): Indrani Majumdar; Pranay K. Sen
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Paper Abstract

Based upon the time dependent perturbation theory for coherent radiation-semiconductor interaction, the possibility of occurrence of the phenomenon of two-pulse photon echo has been investigated analytically in a bulk direct-gap semiconductor under near resonant transition regime below the absorption edge of the crystal. The excitation intensity is chosen to be in the low-to-moderate power regime such that the photoinduced electron-hole pair density remains below the Mott transition limit and the weakly bound Wannier-Mott excitonic structure of the crystal absorption edge is manifested. The band gap renormalization effect is also taken into account. Numerical estimation of the transmitted intensity has been made for electron-hole transition to the 1s excitonic states in the bulk CdS crystal. The analytical results demonstrate the occurrence of photon echo in direct-gap semiconductors.

Paper Details

Date Published: 28 April 1999
PDF: 8 pages
Proc. SPIE 3666, International Conference on Fiber Optics and Photonics: Selected Papers from Photonics India '98, (28 April 1999); doi: 10.1117/12.347989
Show Author Affiliations
Indrani Majumdar, Shri GS Institute of Technology and Science (India)
Pranay K. Sen, Shri GS Institute of Technology and Science (India)


Published in SPIE Proceedings Vol. 3666:
International Conference on Fiber Optics and Photonics: Selected Papers from Photonics India '98

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