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Proceedings Paper

Nanoscale fabrication by interferometric lithography
Author(s): Saleem H. Zaidi; Steven R. J. Brueck
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Paper Abstract

Interferometric lithography (IL) techniques provide a demonstrated, low-cost, large area nanoscale patterning capability with feature resolution to approximately 50 nm. Combining IL with anisotropic etching (both by reactive-ion etching and by KOH wet etching) and with 3-D oxidation techniques provides a suite of techniques that accesses a broad range of Si nanostructures (as small as 10 nm) over large areas and with good uniformity. Optical characterization includes measurements of reflectivity for a wide range of 1D grating profiles, and Raman scattering characterization of Si nanostructures. Three regimes are found for the Raman scattering: bulk (to linewidths of approximately 200 nm), resonant enhanced (approximately 50 nm linewidths) and asymmetry and splitting (linewidths less than 20 nm).

Paper Details

Date Published: 7 May 1999
PDF: 4 pages
Proc. SPIE 3740, Optical Engineering for Sensing and Nanotechnology (ICOSN '99), (7 May 1999); doi: 10.1117/12.347832
Show Author Affiliations
Saleem H. Zaidi, Univ. of New Mexico (United States)
Steven R. J. Brueck, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 3740:
Optical Engineering for Sensing and Nanotechnology (ICOSN '99)
Ichirou Yamaguchi, Editor(s)

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