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Proceedings Paper

Fabrication of multilevel diffractive elements in SiO2 by electron-beam lithography and proportional etching
Author(s): Pasi Laakkonen; Jari Lautanen; Janne Simonen; Jari Pekka Turunen; Veli-Pekka Leppanen; Timo Jaaskelainen
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Paper Abstract

A new negative low-contrast electron beam resist X AR-N 7700/18 is used in multilevel structuring with direct electron beam exposure. The developed multilevel resist profiles are transferred into SiO2 substrates with reactive ion etching (RIE) and the desired profile depths are achieved by a proper adjustment of the pressure during the etching process. The tolerance of profile depth errors is found to be less than 2.5%. Examples of multilevel pixel-structured gratings and diffractive lenses are given.

Paper Details

Date Published: 7 May 1999
PDF: 4 pages
Proc. SPIE 3740, Optical Engineering for Sensing and Nanotechnology (ICOSN '99), (7 May 1999); doi: 10.1117/12.347805
Show Author Affiliations
Pasi Laakkonen, Univ. of Joensuu (Finland)
Jari Lautanen, Univ. of Joensuu (Finland)
Janne Simonen, Univ. of Joensuu (Finland)
Jari Pekka Turunen, Univ. of Joensuu (Finland)
Veli-Pekka Leppanen, Nanocomp Ltd. (Finland)
Timo Jaaskelainen, Nanocomp Ltd. (Finland)


Published in SPIE Proceedings Vol. 3740:
Optical Engineering for Sensing and Nanotechnology (ICOSN '99)

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