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Proceedings Paper

Laser-induced modifications of binary Co-Si and ternary Co-Ti-Si films
Author(s): Maris Knite; Valentinas J. Snitka; Arthur Medvids
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Paper Abstract

Formation of clusters of vacancies in crystalline CoSi2 has been attained by Q-switched YAG:Nd laser. The X-ray diffraction, atomic force microscopy and electrical resistance measurements, and infrared reflection spectra give evidence of formation of Si vacancies. By laser treatment with intensity ranging from 20 to 50 MW/cm2 in air the magnitude of the resistance of the CoSi2 layer increases approximately by a factor of three, in liquid nitrogen medium approximately by a factor of five. The second task of the present study has been to use the pulsed laser treatment of approach as much as possible the zero value of thermal coefficient of resistivity (TCR) of a Co- Ti-Si layer. The TCR of a Co-Ti-Si layer subject to previous treatment for 30 min at 460 degree(s)C becomes smaller than 10-5 K-1 after irradiation of nine 150 ns CO2 laser pulses of the intensity I equals 1 MW/cm2.

Paper Details

Date Published: 7 May 1999
PDF: 5 pages
Proc. SPIE 3571, Tenth International School on Quantum Electronics: Laser Physics and Applications, (7 May 1999); doi: 10.1117/12.347651
Show Author Affiliations
Maris Knite, Riga Technical Univ. (Latvia)
Valentinas J. Snitka, Kaunas Univ. of Technology (Lithuania)
Arthur Medvids, Riga Technical Univ. (Latvia)

Published in SPIE Proceedings Vol. 3571:
Tenth International School on Quantum Electronics: Laser Physics and Applications
Peter A. Atanasov; Dimitar V. Stoyanov, Editor(s)

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