Share Email Print
cover

Proceedings Paper

RF- and dc-plasma-assisted laser deposition of a-CNx thin films
Author(s): Rumen I. Tomov; Miroslav Jelinek; Jiri Bulir
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Carbon nitride thin films are candidates for various technological applications. Special kind of a-Cnx film, as (beta) -C3N4, is supposed to be material exhibiting extreme hardness--higher than diamond. Many groups are trying to synthesize a-CNx films (with goal of creation (beta) -C3N4 phase), but concentration of nitrogen in films is still low. We have created series of nitrogenated amorphous carbon films in nitrogen atmosphere from graphite target by pulsed laser deposition. Additional DC and RF discharges were ignited in order to increase the reactivity of the nitrogen. Film properties were analyzed by X-ray diffraction and spectroscopic ellipsometry. The effects of the discharges on the C-N stoichiometry and on chemical bonding were studied. The N/C ratio increased with higher RF and DC plasma densities up to value of 0.25. Maximum values were reached at the nitrogen pressure twice lower for rf discharge than dc discharge assisted deposition. C-N stoichiometry and chemical bonding were investigated by Fourier transform infrared spectroscopy, X- ray Photoelectron Spectroscopy and Raman spectroscopy. Only films deposited at higher rf plasma power density showed the presence of triple bonded C equalsV N stretching mode.

Paper Details

Date Published: 7 May 1999
PDF: 5 pages
Proc. SPIE 3571, Tenth International School on Quantum Electronics: Laser Physics and Applications, (7 May 1999); doi: 10.1117/12.347649
Show Author Affiliations
Rumen I. Tomov, Institute of Electronics (Bulgaria)
Miroslav Jelinek, Institute of Physics (Czech Republic)
Jiri Bulir, Institute of Electronics (Czech Republic)


Published in SPIE Proceedings Vol. 3571:
Tenth International School on Quantum Electronics: Laser Physics and Applications

© SPIE. Terms of Use
Back to Top