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Proceedings Paper

Laser ablation of nylon 6.6 under UV irradiation at 193 and 248 nm
Author(s): N. Vassilopoulos; Alkiviadis Constantinos Cefalas; Z. Kollia; Evangelia Sarantopoulou; Constantine D. Skordoulis
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Paper Abstract

We report on the ablative etching of Nylon 6.6 [-NH-(CH2)6-NH-CO-(CH2)4-CO-] at 193 nm and 248 nm, using a pulse discharged ArF and KrF excimer laser respectively. The etch rate at different fluences was determined for both wavelengths, along with other descriptive parameters such as the threshold fluence. The mass spectroscopic analysis showed that even at low laser energies there was a complete braking of the polymer chain bonds at both wavelengths. Moreover it seems that photofragments with two carbon atoms along with the C equals O radical, have a higher probability to be ablated, while photofragments with three carbon atoms appear only under irradiation at 248 nm. No significant photofragments beyond 50 amu were recorded at both laser wavelengths.

Paper Details

Date Published: 7 May 1999
PDF: 5 pages
Proc. SPIE 3571, Tenth International School on Quantum Electronics: Laser Physics and Applications, (7 May 1999); doi: 10.1117/12.347645
Show Author Affiliations
N. Vassilopoulos, National Hellenic Research Foundation (Greece)
Alkiviadis Constantinos Cefalas, National Hellenic Research Foundation (Greece)
Z. Kollia, National Hellenic Research Foundation (Greece)
Evangelia Sarantopoulou, National Hellenic Research Foundation (Greece)
Constantine D. Skordoulis, Univ. of Ioannina (Greece)

Published in SPIE Proceedings Vol. 3571:
Tenth International School on Quantum Electronics: Laser Physics and Applications
Peter A. Atanasov; Dimitar V. Stoyanov, Editor(s)

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