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Proceedings Paper

Misfit defect configurations associated with stacking faults in thin crystalline film/substrate systems
Author(s): Mikhail Yu. Gutkin; Kristina N. Mikaelyan; Ilya A. Ovid'ko
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Paper Abstract

Relaxation of misfit stresses in heteroepitaxial systems occurs in many cases via the generation of either perfect or partial misfit dislocations (MDs). The formation of a row of parallel partial MDs has been theoretically described with the help of the simplified energetic approach do not taking into account interactions of MDs with the free surface and pre- existent misfit stresses as well as dislocation-dislocation interactions. However, these interactions are expected to essentially influence on behavior of partial MDs as it is the case with perfect ones. The main aim of this work is to theoretically examine the energetics of partial MDs located in the tips of V-shaped stacking faults with the above interactions being taken into account.

Paper Details

Date Published: 5 May 1999
PDF: 2 pages
Proc. SPIE 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (5 May 1999); doi: 10.1117/12.347456
Show Author Affiliations
Mikhail Yu. Gutkin, Institute of Machine Science Problems (Russia)
Kristina N. Mikaelyan, Institute of Machine Science Problems (Russia)
Ilya A. Ovid'ko, Institute of Machine Science Problems (Russia)


Published in SPIE Proceedings Vol. 3687:
International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Alexander I. Melker, Editor(s)

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