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Proceedings Paper

Physical model of copper clusters formation in hydrogenated amorphous carbon grown by ion cosputtering of graphite and copper
Author(s): Dmitri V. Kulikov; Yuri V. Trushin; Vladimir S. Kharlamov
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Paper Abstract

Interest of conductive cluster physics is stimulated by its possible applications to nano- and micro-electronics. Modification of Diamond Like Carbon (DLC) properties by introduction of metallic nanoclusters (e.g. copper) is of great interest because of the possibility to vary useful properties of the material and to give deeper insight into its structure. One of the way to make DLC film is to grown it by ion co-sputtering of graphite and copper. The grown films have been investigated by electron microscopy (TEM), Selected Area Electron Diffraction (SAED) and optical absorption. In present work the model is proposed of evolution of copper nanoclusters during DLC film growth. The size distribution function of these clusters have been obtained with satisfactory agreement with experimental results. The value of surface activation migration energy of copper has been estimated. The main assumptions of the model are the following: (1) Numerical estimations show that during film growth copper and carbon atoms fall on film surface with low energy insufficient to deep penetrate into the sample. Therefore only surface processes are taken into account. (2) Copper atoms may diffuse only on film surface, because copper diffusion in bulk DLC is negligible. So all diffusion processes occur during growth of one or two monolayers of the film. (3) Diffusing copper atoms may create bi-clusters and join to already existing clusters to form clusters with bigger sizes. So copper clusters with different sizes exist in the film.

Paper Details

Date Published: 5 May 1999
PDF: 2 pages
Proc. SPIE 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (5 May 1999); doi: 10.1117/12.347439
Show Author Affiliations
Dmitri V. Kulikov, A.F. Ioffe Physical-Technical Institute (Russia)
Yuri V. Trushin, A.F. Ioffe Physical-Technical Institute (Russia)
Vladimir S. Kharlamov, A.F. Ioffe Physical-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 3687:
International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Alexander I. Melker, Editor(s)

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