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Proceedings Paper

Displacement threshold energies of impurity atoms in GaAs heterostructures
Author(s): Boris J. Ber; Yuri A. Kudrjavtsev; Vladimir S. Kharlamov; Yuri V. Trushin; Evgeni E. Zhurkin
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Paper Abstract

The new approach for the determination of displacement threshold energies (Ed) of impurity atoms in multicomponent targets has been proposed. The approach combines an experimental SIMS-profiling technique and a computer simulation by a dynamic DYTRIRS code. The developed approach was applied for the determination of Ed the for Al and In impurity atoms in GaAs targets.

Paper Details

Date Published: 5 May 1999
PDF: 4 pages
Proc. SPIE 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (5 May 1999); doi: 10.1117/12.347435
Show Author Affiliations
Boris J. Ber, A.F. Ioffe Physical-Technical Institute (Russia)
Yuri A. Kudrjavtsev, A.F. Ioffe Physical-Technical Institute (Russia)
Vladimir S. Kharlamov, A.F. Ioffe Physical-Technical Institute (Russia)
Yuri V. Trushin, A.F. Ioffe Physical-Technical Institute (Russia)
Evgeni E. Zhurkin, St. Petersburg State Technical Univ. (Russia)


Published in SPIE Proceedings Vol. 3687:
International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Alexander I. Melker, Editor(s)

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