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Proceedings Paper

Radiation-stimulated processes in Si surface layers
Author(s): Patrick W. M. Jacobs; Arnold E. Kiv; Vladimir N. Soloviev; Tatiana N. Maximova; Valery V. Chislov
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Paper Abstract

Molecular dynamics computer simulations have been performed to study the character of disordering atom configurations in Si surface layers. The relaxation of free Si surface was investigated. The main structural parameters were calculated, such as a distribution of angles between chemical bonds, the density of dangling bonds, structural peculiarities of Si surface layers and radiation effects. It was concluded that Si surface at real conditions is a disordered phase similar to a- Si.

Paper Details

Date Published: 5 May 1999
PDF: 5 pages
Proc. SPIE 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (5 May 1999); doi: 10.1117/12.347417
Show Author Affiliations
Patrick W. M. Jacobs, Western Ontario Univ. (Canada)
Arnold E. Kiv, Western Ontario Univ. and South Ukrainian Pedagogical Univ. (Canada)
Vladimir N. Soloviev, Krivoy Rog Pedagogical Univ. (Ukraine)
Tatiana N. Maximova, Krivoy Rog Pedagogical Univ. (China)
Valery V. Chislov, South Ukrainian Pedagogical Univ. (Ukraine)


Published in SPIE Proceedings Vol. 3687:
International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Alexander I. Melker, Editor(s)

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