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Proceedings Paper

Galvanomagnetic properties of heterophase materials at high pressure
Author(s): Vladimir V. Shchennikov; Svetlana V. Popova; Sergey V. Ovsyannikov
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Paper Abstract

Magnetoresistance (MR) measurements are known to be used for the determination of electron density and mobility in bulk semiconductors and also in a wide variety of multi-layers fabricated devices. By use of the synthetic diamond plungers MR of high pressure phases have been measured for Mercury, Cadmium and Zinc Chalcogenides etc. up to 30 GPa. At pressure- induced phase transformations in some materials (HgSe, HgTe, HgO, CdTe) the inversions of MR sign were observed due to electron structure reconstruction and changing the electron scattering mechanisms. In the vicinity of the phase boundary MR effect was sufficient to the content of phase inclusions, so HgSe, HgCdSe and HgSeS crystals had unusual electrical and galvanomagnetic properties at high pressures. The aim of the present paper is to investigate the influence of phase inclusions on the Hall effect, MR, value of resistivity (rho) and its temperature dependence.

Paper Details

Date Published: 5 May 1999
PDF: 2 pages
Proc. SPIE 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (5 May 1999); doi: 10.1117/12.347409
Show Author Affiliations
Vladimir V. Shchennikov, Institute of Metals Physics (Russia)
Svetlana V. Popova, Institute of Metals Physics (Russia)
Sergey V. Ovsyannikov, Institute of Metals Physics (Russia)


Published in SPIE Proceedings Vol. 3687:
International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Alexander I. Melker, Editor(s)

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