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Proceedings Paper

Evaluation of the carrier effective mass and relaxation time in nonuniformly doped semiconductor structures on the basis of spectrophotometrical experiments
Author(s): Vladislav V. Nelayev; Bronislav B. Sevruk
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Paper Abstract

The numerical simulation of infrared reflection and transmission spectra for nonuniformly doped semiconductor structures (P and As in Si and Zn in GaAs) was performed. The radiation interaction with free electrons as well as phonons was taken into account. The possibility of determination of the carrier effective mass m* and relaxation time (tau) concentration dependencies from the spectrophotometrical measurements was established.

Paper Details

Date Published: 5 May 1999
PDF: 2 pages
Proc. SPIE 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (5 May 1999); doi: 10.1117/12.347407
Show Author Affiliations
Vladislav V. Nelayev, Belorussian State Univ. of Informatics and Radioelectronics (Belarus)
Bronislav B. Sevruk, Belorussian State Univ. of Informatics and Radioelectronics (Belarus)


Published in SPIE Proceedings Vol. 3687:
International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering

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