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Proceedings Paper

Quantum interference and conductance in silicon quantum wires
Author(s): Nikolai T. Bagraev; Wolfgang Gehlhoff; Vadim K. Ivanov; Leonid E. Klyachkin; Anna M. Malyarenko; Alexander Naeser; Serguei A. Rykov; Ivan A. Shelykh
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Paper Abstract

We present the findings of quantized conductance (QC), Coulomb staircase (CS) and local tunneling spectroscopy (LTS) techniques which reveal the single-hole confinement and charging phenomena in the smooth and modulated quantum wires created electrostatically inside self-assembly longitudinal (SLQW) and lateral (SLaQW) silicon quantum wells. The current- voltage (CV) characteristics obtained are in a good agreement with the data of the theoretical calculations taking account of quantum interference effects in the field-dependent value of the transmission coefficient through the quantum wires that exhibit the different degree of a modulation.

Paper Details

Date Published: 5 May 1999
PDF: 10 pages
Proc. SPIE 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (5 May 1999); doi: 10.1117/12.347405
Show Author Affiliations
Nikolai T. Bagraev, A.F. Ioffe Physical-Technical Institute (Russia)
Wolfgang Gehlhoff, Technische Univ. Berlin (Germany)
Vadim K. Ivanov, St. Petersburg State Technical Univ. (Russia)
Leonid E. Klyachkin, A.F. Ioffe Physical-Technical Institute (Russia)
Anna M. Malyarenko, A.F. Ioffe Physical-Technical Institute (Russia)
Alexander Naeser, Technische Univ. Berlin (Germany)
Serguei A. Rykov, St. Petersburg State Technical Univ. (Russia)
Ivan A. Shelykh, St. Petersburg State Technical Univ. (Russia)


Published in SPIE Proceedings Vol. 3687:
International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Alexander I. Melker, Editor(s)

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