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Proceedings Paper

Pair charge correlations in silicon nanostructures
Author(s): Nikolai T. Bagraev; Alexei D. Bouravleuv; Vitaly E. Gasumyants; Wolfgang Gehlhoff; Leonid E. Klyachkin; Anna M. Malyarenko; Alexander Naeser; Vladimir V. Romanov; Serguei A. Rykov; Ekaterina V. Vladimirskaya
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Paper Abstract

We present the findings of the single-hole and pair-hole tunneling into the negative-U centers at the edges of the self-assembly longitudinal silicon quantum wells which are realized using the surface injection of self-interstitials and vacancies controlled in the process of non-equilibrium boron diffusion into the Si(100)-wafer.

Paper Details

Date Published: 5 May 1999
PDF: 7 pages
Proc. SPIE 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (5 May 1999); doi: 10.1117/12.347404
Show Author Affiliations
Nikolai T. Bagraev, A.F. Ioffe Physical-Technical Institute (Russia)
Alexei D. Bouravleuv, St. Petersburg State Technical Univ. (Russia)
Vitaly E. Gasumyants, St. Petersburg State Technical Univ. (Russia)
Wolfgang Gehlhoff, Technische Univ. Berlin (Germany)
Leonid E. Klyachkin, A.F. Ioffe Physical-Technical Institute (Russia)
Anna M. Malyarenko, A.F. Ioffe Physical-Technical Institute (Russia)
Alexander Naeser, Technische Univ. Berlin (Germany)
Vladimir V. Romanov, St. Petersburg State Technical Univ. (Russia)
Serguei A. Rykov, St. Petersburg State Technical Univ. (Russia)
Ekaterina V. Vladimirskaya, St. Petersburg State Technical Univ. (Russia)


Published in SPIE Proceedings Vol. 3687:
International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Alexander I. Melker, Editor(s)

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