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Proceedings Paper

Large-area silica films deposited on silicon substrates by a CO2 laser
Author(s): Tamas Szoerenyi; P. Gonzalez; M. Dolores Fernandez; Juan Pou; Betty M. Leon-Fong; Mariano Perez-Amor
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Paper Abstract

Conventional (thermal) CVD of Si02 is a well established method widely used e.g. in the microelectronic industry. Recognizing the big success of CO2 laser induced CVD in depositing high quality amorphous silicon (a-Si) films from silane it is quite surprising that -to the best of our knowledge- there has been no report on a-SiQ thin film deposition initiated by a cw CO laser in parallel configuration. In this contribution we report the first results of a systematic study on cw CO2 laser induced CVD of silicon oxide films onto silicon wafers from SiH I N20 I Ar gas mixtures in parallel configuration in comparison with similar experiments for a-Si film formation. Gas mixture absorption behaviour and total pressure rise under laser irradiation demonstrate that the SiO production can be due to homogeneous gas heating similar to the a-Si:H deposition. The films deposited are characterized by IR transmission spectroscopy. The fact that well adhering silicon oxide films can be produced with reasonable growth rates by using a simple and inexpensive laser makes this method attractive for industrial applications.

Paper Details

Date Published: 1 August 1990
PDF: 6 pages
Proc. SPIE 1279, Laser-Assisted Processing II, (1 August 1990); doi: 10.1117/12.34713
Show Author Affiliations
Tamas Szoerenyi, Hungarian Academy of Sciences (Hungary)
P. Gonzalez, Univ. of Vigo (Spain)
M. Dolores Fernandez, Univ. of Vigo (Spain)
Juan Pou, Univ. of Vigo (Spain)
Betty M. Leon-Fong, Univ. of Vigo (Spain)
Mariano Perez-Amor, Univ. of Vigo (Spain)


Published in SPIE Proceedings Vol. 1279:
Laser-Assisted Processing II
Lucien Diego Laude, Editor(s)

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