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Proceedings Paper

Direct observation of intraband carrier relaxation phenomena in semiconductors with a picosecond free-electron laser
Author(s): Alec P. Mitchell; Alan H. Chin; Junichiro Kono
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Paper Abstract

We have performed time-resolved terahertz (THz) - near-IR (NIR) two-color spectroscopy on InSb, using the Stanford picosecond free-electron laser synchronized with a femtosecond NIR Ti:Sapphire laser. The initial NIR pulse excites non-equilibrium electron and holes, which absorb the picosecond THz pulse. The time profile of the photo-induced absorption is a sensitive probe of intraband carrier relaxation dynamics. Using these techniques we have made the first observation of time-resolved cyclotron resonance (TRCR) of photo-created electronics in InSb for time delays from a few picoseconds to several tens of nanoseconds. This TRCR data shows possible evidence of a magnetic-field- induced LO-photon bottleneck effect. Furthermore, we have detected very unusual multi-component relaxation and photo- induced transparency under certain conditions.

Paper Details

Date Published: 29 April 1999
PDF: 9 pages
Proc. SPIE 3617, Terahertz Spectroscopy and Applications, (29 April 1999); doi: 10.1117/12.347125
Show Author Affiliations
Alec P. Mitchell, Stanford Univ. (United States)
Alan H. Chin, Stanford Univ. (United States)
Junichiro Kono, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 3617:
Terahertz Spectroscopy and Applications
Mark S. Sherwin, Editor(s)

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