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Proceedings Paper

850-nm oxide VCSEL development at Hewlett-Packard
Author(s): Hongyu Deng; James J. Dudley; Sui F. Lim; Chun Lei; Bing Liang; M. Tashima; Lee A. Hodge; Xuemei Zhang; John Herniman; Robert W. Herrick
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Paper Abstract

Oxide confined VCSELs are being developed at Hewlett-Packard for the next-generation low cost fiber optics communication applications. Compared to the existing 850 nm implant confined VCSELs, the oxide VCSELs have lower operating voltages, higher slope efficiencies, and better modal bandwidth characteristics. Preliminary data on epitaxy and oxidation control uniformity, device performance, and reliability will be discussed.

Paper Details

Date Published: 29 April 1999
PDF: 6 pages
Proc. SPIE 3627, Vertical-Cavity Surface-Emitting Lasers III, (29 April 1999); doi: 10.1117/12.347103
Show Author Affiliations
Hongyu Deng, Hewlett-Packard Co. (United States)
James J. Dudley, Hewlett-Packard Co. (United States)
Sui F. Lim, Hewlett-Packard Co. (United States)
Chun Lei, Hewlett-Packard Co. (United States)
Bing Liang, Hewlett-Packard Co. (United States)
M. Tashima, Hewlett-Packard Co. (United States)
Lee A. Hodge, Hewlett-Packard Co. (United States)
Xuemei Zhang, Hewlett-Packard Co. (United States)
John Herniman, Hewlett-Packard Co. (United States)
Robert W. Herrick, Hewlett-Packard Co. (United States)


Published in SPIE Proceedings Vol. 3627:
Vertical-Cavity Surface-Emitting Lasers III
Kent D. Choquette; Chun Lei, Editor(s)

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