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Proceedings Paper

Analysis of polarization pinning in vertical-cavity surface-emitting lasers using etched trenches
Author(s): Laurence J. Sargent; Judy M. Rorison; Martin Kuball; Richard V. Penty; Ian H. White; Peter J. Heard; Michael R. T. Tan; Scott W. Corzine; Dubravko I. Babic; Shih-Yuan Wang
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Paper Abstract

Recent work has shown that the etching of deep trenches in close proximity to GaAs VCSEL apertures consistently causes the linear TE polarization of the emission to be pinned in a direction parallel to the line etch. Further enhancement of this polarization pinning has been achieved by post- annealing after etching. Initial studies have been carried out using photoluminescence and Raman measurements of the VCSEL wafer before and after etching as well as after annealing. Modeling the observed shift in the optical cavity (longitudinal) mode has indicated that etching introduces strain perpendicular to the etch in the active region of the VCSEL of 4 X 108 dyn/cm2. The strain causes the cavity mode to shift to longer wavelength and reduces the spontaneous emission in the direction perpendicular to the etched trenches. The strain introduced by etching is believed to be the origin of this polarization pinning effect. Measurements of the spontaneous emission profile across the VCSEL facet after etching give valuable information on the mechanisms involved.

Paper Details

Date Published: 29 April 1999
PDF: 7 pages
Proc. SPIE 3627, Vertical-Cavity Surface-Emitting Lasers III, (29 April 1999); doi: 10.1117/12.347101
Show Author Affiliations
Laurence J. Sargent, Univ. of Bristol (United Kingdom)
Judy M. Rorison, Univ. of Bristol (United Kingdom)
Martin Kuball, Univ. of Bristol (United Kingdom)
Richard V. Penty, Univ. of Bristol (United Kingdom)
Ian H. White, Univ. of Bristol (United Kingdom)
Peter J. Heard, Univ. of Bristol (United Kingdom)
Michael R. T. Tan, Hewlett-Packard Co. (United States)
Scott W. Corzine, Hewlett-Packard Co. (United States)
Dubravko I. Babic, Hewlett-Packard Co. (United States)
Shih-Yuan Wang, Hewlett-Packard Co. (United States)


Published in SPIE Proceedings Vol. 3627:
Vertical-Cavity Surface-Emitting Lasers III
Kent D. Choquette; Chun Lei, Editor(s)

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