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Proceedings Paper

Characterization of 3D resist patterns by means of optical scatterometry
Author(s): Joerg Bischoff; Lutz Hutschenreuther; Horst Truckenbrodt; A. Bauer; Ulrich Haak; T. Skaloud
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Paper Abstract

We report about our first attempts to apply optical scatterometry to the characterization of 3D resist patterns. Particularly, nominal quarter micron dots and holes are investigated having a pitch of a half micron in both directions. The specular reflected light versus the incidence angle shows significant variance with changing exposure dose and thus with changing dot or hole diameter, respectively. Scanning electron micrographs serve as an assisting tool for the characterization of the developed resist pattern. Additionally, an algorithm for the rigorous modeling of diffraction from regular 3D-patterns is sketched. In some cases, the match between experiment and theory is already quite satisfying. This might be improved by more refined profile adaption and enhanced computer power.

Paper Details

Date Published: 27 April 1999
PDF: 12 pages
Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); doi: 10.1117/12.346936
Show Author Affiliations
Joerg Bischoff, Technische Univ. Ilmenau (United States)
Lutz Hutschenreuther, Technische Univ. Ilmenau (Germany)
Horst Truckenbrodt, Technische Univ. Ilmenau (Germany)
A. Bauer, Institut fuer Halbleiterphysik (Germany)
Ulrich Haak, Institut fuer Halbleiterphysik (Germany)
T. Skaloud, Institut fuer Halbleiterphysik (Germany)


Published in SPIE Proceedings Vol. 3743:
In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing
Kostas Amberiadis; Gudrun Kissinger; Katsuya Okumura; Seshu Pabbisetty; Larg H. Weiland, Editor(s)

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