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Proceedings Paper

Improvement in diffusion barrier properties of PECVD W-N thin film by low-energy BF2+ implantation
Author(s): Dong Joon Kim; YongTae Kim; Young K. Park; Hyun Sang Sim; Jong-Wan Park
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Paper Abstract

The structural and electrical properties of BF2+ implanted PECVD tungsten nitride thin film were investigated. After BF2+ implantation with 40keV and 1 X 1017 B ions/cm2, W-B+-N layer was formed at the surface region of W-N films. The ternary layer maintained the microcrystalline state and prevented nitrogen out-diffusion form W-N thin film after annealing at 800 degrees C for 30 min. The overall electrical resistivity of W-B+-N/W-N thin film is 200 (mu) (Omega) cm, which is higher than that of W-N thin film because of forming the ternary phase. BF2+ implanted tungsten nitride thin film improved thermal stability against Cu diffusion more than W-N thin film.

Paper Details

Date Published: 27 April 1999
PDF: 8 pages
Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); doi: 10.1117/12.346932
Show Author Affiliations
Dong Joon Kim, Korea Institute of Science and Technology and Hanyang Univ. (South Korea)
YongTae Kim, Korea Institute of Science and Technology (South Korea)
Young K. Park, Korea Institute of Science and Technology (South Korea)
Hyun Sang Sim, Korea Institute of Science and Technology and Hanyang Univ. (South Korea)
Jong-Wan Park, Hanyang Univ. (South Korea)


Published in SPIE Proceedings Vol. 3743:
In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing
Kostas Amberiadis; Gudrun Kissinger; Katsuya Okumura; Seshu Pabbisetty; Larg H. Weiland, Editor(s)

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