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Proceedings Paper

FIB voltage-contrast localization and analysis of contact via chains
Author(s): Peter J. Jacob; Elko Doering
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Paper Abstract

Usually, thick passivations avoid access to voltage contrast localization of electrical opens and shorts. In many cases, depassivation is not a suitable method, since it might influence the failure structure by preparation artifacts. FIB allows both to do in-situ voltage contrast imaging, to put certain parts of the circuitry on ground and to depassivation locally. In-situ failure characterization is also performed by FIB-cross-sectioning and imaging, as it is shown in the following few representative examples.

Paper Details

Date Published: 27 April 1999
PDF: 7 pages
Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); doi: 10.1117/12.346925
Show Author Affiliations
Peter J. Jacob, EM Microelectronic Marin SA and Swiss Federal Labs. for Materials Testing and Research (Switzerland)
Elko Doering, EM Microelectronic Marin SA (Switzerland)


Published in SPIE Proceedings Vol. 3743:
In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing
Kostas Amberiadis; Gudrun Kissinger; Katsuya Okumura; Seshu Pabbisetty; Larg H. Weiland, Editor(s)

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