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Proceedings Paper

Oxide degradation and charging damage by dry etch processing
Author(s): Dumitru Gh. Ulieru
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Paper Abstract

Plasma induced charging damage and oxide degradation after metal and poly etch and photoresist strip were studied using unpatterned oxide wafer technique. The time dependence of plasma induced charging, internal oxide damage oxide damage and charging 'fingerprint' were investigated for poly etch, metal etch processes. Comparison of oxide charging monitor results and SPIDER antennae structures data for photoresist strip process is presented.

Paper Details

Date Published: 27 April 1999
PDF: 8 pages
Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); doi: 10.1117/12.346921
Show Author Affiliations
Dumitru Gh. Ulieru, Romes SA (Romania)


Published in SPIE Proceedings Vol. 3743:
In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing
Kostas Amberiadis; Gudrun Kissinger; Katsuya Okumura; Seshu Pabbisetty; Larg H. Weiland, Editor(s)

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