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Proceedings Paper

Effects of PECVD W-N diffusion barrier on thermal stress and electrical properties of Cu/W-N/SiOF multilevel interconnect
Author(s): YongTae Kim; Dong Joon Kim; Seoghyeong Lee; Young K. Park; Ik-Soo Kim; Jong-Wan Park
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Paper Abstract

Effect of plasma enhanced chemical vapor deposition W-N diffusion barrier on characteristics of Cu based multilevel interconnect with fluorine doped silicon oxide (SiOF) was investigated. AFM results show that surface roughness of Cu film on the SiOF/Si increases 7.27 angstrom to 78.82 angstrom, whereas that of the Cu on the W-N/SiOF/Si, exhibiting smoother surface, increases from 12.49 to 45.31 angstrom after annealing at 500 degrees C for 30 min. Also, the resistivity of Cu/W-N/SiOF/Si system is lower than that of Cu/SiOF/Si after post-annealing. The stress evolution during the annealing at 200-500 degrees C reveals that the Cu and SIOF films have tensile stresses and the W-N film has low compressive stress. Therefore, Cu/W-N/SiOF/Si interconnect has lower tensile than that of Cu/SiOF/Si due to the low compressive stress of the W-N. C-V measurements show that in the Cu/SiOF/Si capacitor the threshold voltage shifts to -0.5 V after annealing at 500 degree C for 30 min. These results mean that the Cu atoms are diffused into the SiOF after post annealing and these Cu atoms act as positive ions in the SiOF. However, in the Cu/W-N/SiOF/Si the W-N prevents the diffusion of Cu atoms into the SiOF and the out diffusion of F from the SiOF.

Paper Details

Date Published: 27 April 1999
PDF: 7 pages
Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); doi: 10.1117/12.346918
Show Author Affiliations
YongTae Kim, Korea Institute of Science and Technology (South Korea)
Dong Joon Kim, Korea Institute of Science and Technology and Hanyang Univ. (South Korea)
Seoghyeong Lee, Hanyang Univ. (South Korea)
Young K. Park, Korea Institute of Science and Technology (South Korea)
Ik-Soo Kim, Korea Institute of Science and Technology (South Korea)
Jong-Wan Park, Hanyang Univ. (South Korea)


Published in SPIE Proceedings Vol. 3743:
In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing
Kostas Amberiadis; Gudrun Kissinger; Katsuya Okumura; Seshu Pabbisetty; Larg H. Weiland, Editor(s)

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