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Proceedings Paper

Ring-type ESD damage caused by electrostatic chuck of ion implanter
Author(s): Mingchu King; Chun-Keng Hsu; Chiang Fu; Hsin-Chie Huang; Shih-Yi Yang; Yuan-Lung Liu; Kuo-chin Hsu
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Paper Abstract

Electrostatic discharge (ESD) due to electrostatic chuck (ESC) during ion implantation was observed in our fab. This defect could burn out the inter-layer dielectric and jeopardize the circuit performance. the yield impact on 0.35 micrometers product could be 40 percent. The defect distributed around the wafer edge and has a ring-type map. This defect occurred right after ESD implantation. The fringe field of the electrostatic chuck is the key reason why ring-type electrostatic discharge damage happened right after ion implantation. Our experimental result also showed that the junction characterization and surface conductivity will influence the probability of ESD damage caused by electrostatic chuck of ion implanter.

Paper Details

Date Published: 27 April 1999
PDF: 5 pages
Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); doi: 10.1117/12.346916
Show Author Affiliations
Mingchu King, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chun-Keng Hsu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chiang Fu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Hsin-Chie Huang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Shih-Yi Yang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Yuan-Lung Liu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Kuo-chin Hsu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 3743:
In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing
Kostas Amberiadis; Gudrun Kissinger; Katsuya Okumura; Seshu Pabbisetty; Larg H. Weiland, Editor(s)

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