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Proceedings Paper

Some optoelectronic properties controlled by an electric field in the glasses coated by thin oxide films
Author(s): Jadwiga Olesik; Michal Janusz Malachowski; Zygmunt Olesik
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Paper Abstract

The work contains results of investigation on the phenomena of the electron emission and photoemission in thin oxide layers in which internal electric field has been generated. Study on secondary electron emission from complex many- layered emitters has led to the discovery of Malter's effect. Basing on it, the sample was a glass with semiconducting films evaporated on its both sides. The internal electric field was created by applying a negative voltage Upol to the field electrode. The investigations were performed in the vacuum of the order 10-6 Pa. As a result of applying Upol and illumination, electrons and photoelectrons are released and recorded as voltage pulses in the multichannel pulse amplitude analyzer. The amplitude spectra N(U) equals f(U) for various Upol were measured for not illuminated samples and illuminated ones. Electron emission yield dependence on the intensity of an internal field and illumination was measured. With increasing Upol the count frequency of pulses grows monotonically. The electric field initiates electron collisions which proceed according to the impact ionization mechanism. Energy analysis of emitted electrons was performed by the retarding field method. Measurements of electron energy in field induced emission showed that about 80 percent of electrons have energy up to 10 eV.

Paper Details

Date Published: 27 April 1999
PDF: 8 pages
Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); doi: 10.1117/12.346915
Show Author Affiliations
Jadwiga Olesik, Pedagogical Univ. of Czestochowa (Poland)
Michal Janusz Malachowski, Pedagogical Univ. of Czestochowa (Poland)
Zygmunt Olesik, Pedagogical Univ. of Czestochowa (Poland)

Published in SPIE Proceedings Vol. 3743:
In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing
Kostas Amberiadis; Gudrun Kissinger; Katsuya Okumura; Seshu Pabbisetty; Larg H. Weiland, Editor(s)

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