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Proceedings Paper

High-accuracy development monitoring technology
Author(s): Shinichi Ito; Kei Hayasaki; Kenji Kawano; Koutaro Sho; Shoji Mimotogi; Fumio Komatsu; Katsuya Okumura
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Paper Abstract

A development monitor system capable of highly accurate control of pattern width has been established. This system is composed of a unique monitor pattern on the process wafer, the 0th order diffraction light measuring unit, and the image analysis and process control unit. In the conventional development process in which no monitor system is employed, the CD variation in 200nm line width was about 15nm when +/- 5 percent dose error exist. However, using the new system, 1nm of CD variation was obtained. In this article, a high-sensitivity monitor pattern is proposed and its performance in controlling 200nm line and space patterns in the development process is reported.

Paper Details

Date Published: 27 April 1999
PDF: 9 pages
Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); doi: 10.1117/12.346907
Show Author Affiliations
Shinichi Ito, Toshiba Corp. (Japan)
Kei Hayasaki, Toshiba Corp. (Japan)
Kenji Kawano, Toshiba Corp. (Japan)
Koutaro Sho, Toshiba Corp. (Japan)
Shoji Mimotogi, Toshiba Corp. (Japan)
Fumio Komatsu, Toshiba Corp. (Japan)
Katsuya Okumura, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 3743:
In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing
Kostas Amberiadis; Gudrun Kissinger; Katsuya Okumura; Seshu Pabbisetty; Larg H. Weiland, Editor(s)

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