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Proceedings Paper

193-nm lithography: new challenges, new worries
Author(s): Martin McCallum; Wolf-Dieter Domke; Jeff D. Byers; David R. Stark
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Paper Abstract

Photolithography has now moved forward to such an extent that we are considering imaging the 130nm and 100nm technology nodes with optical system, unthinkable a handful of years ago. To do this we have been using the biggest control knob we know, wavelength. The latest wavelength to be introduced into production will be 193nm which will arrive with full field scanners this year. To image using 193nm we have had to radically change the polymer systems we use due to high absorption with conventional chemistries. This has led to materials that will be the most difficult to integrate into manufacturing that we have ever faced. The primary challenge we encounter is the high resist thickness loss in the pattern transfer steps. This is primarily due to low etch resistance of the materials in use but we will also show that photochemical deprotection of the resist during etch has a contribution. One approach to overcome this is to use significantly thicker resist films, this leads to its own problems with pattern collapse a major worry which could easily become a limiting factor in this technique.

Paper Details

Date Published: 28 April 1999
PDF: 7 pages
Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999); doi: 10.1117/12.346900
Show Author Affiliations
Martin McCallum, SEMATECH and Motorola (United States)
Wolf-Dieter Domke, SEMATECH and Siemens AG (Germany)
Jeff D. Byers, SEMATECH (United States)
David R. Stark, SEMATECH (United States)


Published in SPIE Proceedings Vol. 3741:
Lithography for Semiconductor Manufacturing
Chris A. Mack; Tom Stevenson, Editor(s)

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