Proceedings Paper
Effect of photoresist contrast on intrafield critical dimensions in sub-half-micron optical lithography| Format | Member Price | Non-Member Price |
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Paper Abstract
Resist contrast is related to usable depth-of-focus (UDOF) for I-line and DUV stepper lenses through the resists process linearity function. Results, supported by simulations in the resist image, show that stepper field center-edge critical dimensional offsets, which decrease UDOF, increase as resist contrast decreases. Measurements on intra-field CDs show that their uniformity decreases as processes reach non-linear processing regimes.
Paper Details
Date Published: 28 April 1999
PDF: 9 pages
Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999); doi: 10.1117/12.346896
Published in SPIE Proceedings Vol. 3741:
Lithography for Semiconductor Manufacturing
Chris A. Mack; Tom Stevenson, Editor(s)
PDF: 9 pages
Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999); doi: 10.1117/12.346896
Show Author Affiliations
Graham G. Arthur, Rutherford Appleton Lab. (United Kingdom)
Published in SPIE Proceedings Vol. 3741:
Lithography for Semiconductor Manufacturing
Chris A. Mack; Tom Stevenson, Editor(s)
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