Share Email Print

Proceedings Paper

Effect of photoresist contrast on intrafield critical dimensions in sub-half-micron optical lithography
Author(s): Christine Wallace; Brian Martin; Graham G. Arthur
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Resist contrast is related to usable depth-of-focus (UDOF) for I-line and DUV stepper lenses through the resists process linearity function. Results, supported by simulations in the resist image, show that stepper field center-edge critical dimensional offsets, which decrease UDOF, increase as resist contrast decreases. Measurements on intra-field CDs show that their uniformity decreases as processes reach non-linear processing regimes.

Paper Details

Date Published: 28 April 1999
PDF: 9 pages
Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999); doi: 10.1117/12.346896
Show Author Affiliations
Christine Wallace, Mitel Semiconductor (France)
Brian Martin, Mitel Semiconductor (United Kingdom)
Graham G. Arthur, Rutherford Appleton Lab. (United Kingdom)

Published in SPIE Proceedings Vol. 3741:
Lithography for Semiconductor Manufacturing
Chris A. Mack; Tom Stevenson, Editor(s)

© SPIE. Terms of Use
Back to Top