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Proceedings Paper

Best focus shift issues from focusing system of ASML PAS-5000/50 steppers
Author(s): Ming-Huei Tseng; Feng-Liang Lai; Li-Kong Turn
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Paper Abstract

The best focus shift problem was observed on PAS-5000/50 I- line system. The best focus shift could induce poor resist profile in back-end lithography exposure processes, and caused blind via-holes or damage on conductor lines after plasma etch. The effects of topography change, pattern layout and focus laser spot position on the best focus determination were proved related to the focusing system design, single point focus detection with small size probe beam. of PAS-5000/50 steppers. In the main paper, the weak points of the design are pointed out, i.e. the unwanted information due to its dependence on step topography and layout may be collected and cause defocused resist profile during focusing. Though the application of dark-tone digitized scribe line design on dielectric layers reduces step topography discrepancy between main cell and scribe line and partially solves the problems; however, the complete solutions rely on the fundamental improvements on the stepper focusing algorithm.

Paper Details

Date Published: 28 April 1999
PDF: 8 pages
Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999); doi: 10.1117/12.346893
Show Author Affiliations
Ming-Huei Tseng, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Feng-Liang Lai, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Li-Kong Turn, Taiwan Semiconductor Manufacturing Co. (Taiwan)

Published in SPIE Proceedings Vol. 3741:
Lithography for Semiconductor Manufacturing
Chris A. Mack; Tom Stevenson, Editor(s)

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