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Proceedings Paper

New method for determination of the photoresist Dill parameters using spectroscopic ellipsometry
Author(s): Pierre Boher; Christophe Defranoux; Jean-Philippe Piel; Jean-Louis P. Stehle
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Paper Abstract

In this paper a new method to determine photoresist Dill parameters is presented. Based on spectroscopic ellipsometry (SE) measurements, this new method is more precise than standard techniques based on transmittance measurements. Indeed, compared to photometry, SE technique is a self calibrated technique which provide directly two independent parameters Tan (Psi) and Cos (Delta) which can be used to extract directly thickness but also optical indices of a layer inside a multilayer structure. Moreover, the wavelength dependence introduces more restrictions for the data analysis since thickness and optical indices can be deduced directly in many cases. We apply this technique to different kinds of photoresist designed for 365nm and 248nm. At each wavelength ellipsometric parameters are simulated directly versus the exposure dose without any assumption on the thickness and on the index of refraction evolution. On 365nm photoresist this new method provides Dill parameters in good agreement with the standard method. On 248nm photoresist we show that the influence of the exposure is more important on the refractive index and on the thickness of the layer than on its absorption.

Paper Details

Date Published: 28 April 1999
PDF: 12 pages
Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999); doi: 10.1117/12.346880
Show Author Affiliations
Pierre Boher, SOPRA SA (France)
Christophe Defranoux, SOPRA SA (France)
Jean-Philippe Piel, SOPRA SA (France)
Jean-Louis P. Stehle, SOPRA SA (France)

Published in SPIE Proceedings Vol. 3741:
Lithography for Semiconductor Manufacturing
Chris A. Mack; Tom Stevenson, Editor(s)

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