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Proceedings Paper

Understanding advanced lithographic materials: challenges and new characterization techniques
Author(s): Patrick Jean Paniez; Benedicte P. Mortini; Severine Gally; Alain Prola; Charles Rosilio; Pierre-Olivier Sassoulas
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Paper Abstract

The implementation of new resist materials and advanced lithography processes requires new characterization techniques in order to understand the behavior of these systems and optimize their design. Examples are presented on two recent 193nm experimental formulations using three different characterization techniques, namely Modulated- Temperature DSC, in-situ ellipsometry and dielectric analysis. The results obtained provide new experimental evidence of the diffusion and reaction mechanisms involved in chemically amplified formulations.

Paper Details

Date Published: 28 April 1999
PDF: 10 pages
Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999); doi: 10.1117/12.346879
Show Author Affiliations
Patrick Jean Paniez, France Telecom-CNET (France)
Benedicte P. Mortini, ST Microelectronics (France)
Severine Gally, France Telecom-CNET (France)
Alain Prola, France Telecom-CNET (France)
Charles Rosilio, CEA-CENS (France)
Pierre-Olivier Sassoulas, France Telecom-CNET (France)


Published in SPIE Proceedings Vol. 3741:
Lithography for Semiconductor Manufacturing
Chris A. Mack; Tom Stevenson, Editor(s)

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