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Proceedings Paper

Recrystallized polysilicon on insulating substrates as a material for optoelectronic sensors
Author(s): Anatoly A. Druzhinin; Igor Pankevich; Yury Khoverko
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Paper Abstract

Microzone laser recrystallization is represented as a method for obtaining the SOI structures with improved characteristics. The processes of poly-Si-heating is analyzed theoretically and experimentally. A special attention is paid to the control of processes of defects formation and application of polysilicon layers with increased average grain size in the technology of optoelectronic sensors.

Paper Details

Date Published: 30 April 1999
PDF: 4 pages
Proc. SPIE 3730, Optoelectronic and Electronic Sensors III, (30 April 1999); doi: 10.1117/12.346835
Show Author Affiliations
Anatoly A. Druzhinin, Lviv Polytechnical Univ. (Ukraine)
Igor Pankevich, Lviv Polytechnical Univ. (Ukraine)
Yury Khoverko, Lviv Polytechnical Univ. (Ukraine)


Published in SPIE Proceedings Vol. 3730:
Optoelectronic and Electronic Sensors III
Antoni Nowakowski; Bogdan Chachulski, Editor(s)

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