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Proceedings Paper

Characterization, development, and implemenation of multiplaten in-situ rate monitor (ISRM) control for chemical mechanical planarization in ASIC manufacturing
Author(s): Frank H. Szarka; John H. Givens; David Easterday
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Paper Abstract

One of the main struggles in CMP engineering has been how to implement a process control methodology and still have a manufacturable and/or cost-effective process flow. The need for insitu rate monitor (ISRM) control has been well recognized. Variations associated with device/product types, incoming films, consumables and equipment must be accounted for in the setup ofthe CMP process. However, the common engineering practice has been to average the response through the use of batch processing. Batch processing in CMP requires frequent off-line wafer measurements or the acceptance of lower process yield. Both consequences are unacceptable for wafer costs in today's marketplace. Whereas, with the use of endpoint technology in CMP, engineering can provide a customized process for each wafer. This paper will present the characterization, development and implementation of ISRM control of dielectric CMP in an ASIC manufacturing environment. The details concerning the setup of optical interferometry and multi-platen CMP monitoring will be described. Pattern density differences, time to planarization, changes in polish rates and or uniformities, incoming film differences, consumable variations and equipment drift will be visualized by ISRM. And, finally, the impact of ISRM on manufacturability, process yield and probe yield will be quantified.

Paper Details

Date Published: 23 April 1999
PDF: 15 pages
Proc. SPIE 3742, Process and Equipment Control in Microelectronic Manufacturing, (23 April 1999); doi: 10.1117/12.346248
Show Author Affiliations
Frank H. Szarka, VLSI Technology, Inc. (United States)
John H. Givens, VLSI Technology, Inc. (United States)
David Easterday, Applied Materials, Inc. (United States)


Published in SPIE Proceedings Vol. 3742:
Process and Equipment Control in Microelectronic Manufacturing

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