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Proceedings Paper

Metal etch process defects
Author(s): Ting-Yih Lu; Yuan-Ko Hwang; Chia-Hung Lai; Sen-Fu Chen; Chia-Hsiang Chen
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Paper Abstract

In this paper, four major defects for metal etch process will be introduced and discussed. The defect sources related to chamber condition are identified as well. These defects are classified into four types: (1) flake type metal residue, induced by chamber polymer, (2) ball type particle, resulted from the chamber wall arcing during process, (3) on film particle, found during post-etch and photo resist strip processes, (4) metal broken, came from local arcing on wafer. All of these defects would result in metal line bridge and yield loss. In order to reduce the particle contamination, the paper proposes a protection method for chamber parts by using so called `linear' to cover most of chamber parts. The liner could adapt to chamber shape and clean easily. Experimental data shows that it can successfully reduce flake type metal residue, ball type particle. For the on film particle and metal broken, a new routine monitor method is also created.

Paper Details

Date Published: 23 April 1999
PDF: 7 pages
Proc. SPIE 3742, Process and Equipment Control in Microelectronic Manufacturing, (23 April 1999); doi: 10.1117/12.346242
Show Author Affiliations
Ting-Yih Lu, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Yuan-Ko Hwang, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Chia-Hung Lai, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Sen-Fu Chen, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Chia-Hsiang Chen, Taiwan Semiconductor Manufacturing Co. (Taiwan)


Published in SPIE Proceedings Vol. 3742:
Process and Equipment Control in Microelectronic Manufacturing
Kevin Yallup; Murali K. Narasimhan, Editor(s)

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