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Proceedings Paper

High-voltage resurf DMOS process development using covariance-based response surfaces
Author(s): Mark Redford; Martin Fallon; Anthony J. Walton; Z. A. Shafi; Jim McGinty; Ian Underwood
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Paper Abstract

This paper compares the performance of quadratic and covariance models for a RESURF device. TCAD is used in conjunction with a CCI design and both response surfaces and response variances are compared for both models. Experimentally measured distributions are compared with those predicted by TCAD and the differences used to help identify other possible sources of variation.

Paper Details

Date Published: 23 April 1999
PDF: 11 pages
Proc. SPIE 3742, Process and Equipment Control in Microelectronic Manufacturing, (23 April 1999); doi: 10.1117/12.346231
Show Author Affiliations
Mark Redford, National Semiconductor Ltd. (Singapore)
Martin Fallon, National Semiconductor Ltd. (United Kingdom)
Anthony J. Walton, Univ. of Edinburgh (United Kingdom)
Z. A. Shafi, National Semiconductor Ltd. and Chartered Semiconductor Manufacturing Ltd. (Singapore)
Jim McGinty, National Semiconductor Ltd. (United Kingdom)
Ian Underwood, Univ. of Edinburgh (United Kingdom)

Published in SPIE Proceedings Vol. 3742:
Process and Equipment Control in Microelectronic Manufacturing
Kevin Yallup; Murali K. Narasimhan, Editor(s)

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