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Proceedings Paper

Inspecting the new generation of reticles using UV imaging
Author(s): Mark Andrew Merrill; James N. Wiley; Benjamin George Eynon
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Paper Abstract

The manufacturing of advanced reticles for deep UV steppers has stressed the mask industry's writing, processing, inspection and repair capabilities. Meeting technology demands has been especially arduous for reticle defect inspection with the rapid evolution of both novel PSM materials and OPC geometries. Also, the switch to a 4x- reduction ratio and every-lower k1 wafer lithography has resulted in increased overall defect printability. To respond to these challenges, a new reticle inspection system with laser UV imaging has been evaluated and shown to achieve mask defect sensitivity of 150 nm and below on DUV EA-PSM and OPC masks.

Paper Details

Date Published: 23 April 1999
PDF: 8 pages
Proc. SPIE 3665, 15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98, (23 April 1999); doi: 10.1117/12.346228
Show Author Affiliations
Mark Andrew Merrill, KLA-Tencor Corp. (United States)
James N. Wiley, KLA-Tencor Corp. (United States)
Benjamin George Eynon, DuPont Photomasks, Inc. (United States)


Published in SPIE Proceedings Vol. 3665:
15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98
Uwe F. W. Behringer, Editor(s)

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