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Proceedings Paper

Mask technology for EUV lithography
Author(s): M. Bujak; Scott C. Burkhart; Charles J. Cerjan; Patrick A. Kearney; Craig E. Moore; Shon T. Prisbrey; Donald W. Sweeney; William M. Tong; Stephen P. Vernon; Christopher C. Walton; Abbie L. Warrick; Frank J. Weber; Marco Wedowski; Karl Child Wilhelmsen; Jeffrey Bokor; Sungho Jeong; Gregory Frank Cardinale; Avijit K. Ray-Chaudhuri; Alan R. Stivers; Edita Tejnil; Pei-yang Yan; Scott Daniel Hector; Khanh B. Nguyen
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Paper Abstract

Extreme UV Lithography (EUVL) is one of the leading candidates for the next generation lithography, which will decrease critical feature size to below 100 nm within 5 years. EUVL uses 10-14 nm light as envisioned by the EUV Limited Liability Company, a consortium formed by Intel and supported by Motorola and AMD to perform R and D work at three national laboratories. Much work has already taken place, with the first prototypical cameras operational at 13.4 nm using low energy laser plasma EUV light sources to investigate issues including the source, camera, electro- mechanical and system issues, photoresists, and of course the masks. EUV lithograph masks are fundamentally different than conventional photolithographic masks as they are reflective instead of transmissive. EUV light at 13.4 nm is rapidly absorbed by most materials, thus all light transmission within the EUVL system from source to silicon wafer, including EUV reflected from the mask, is performed by multilayer mirrors in vacuum.

Paper Details

Date Published: 23 April 1999
PDF: 10 pages
Proc. SPIE 3665, 15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98, (23 April 1999); doi: 10.1117/12.346225
Show Author Affiliations
M. Bujak, Lawrence Livermore National Lab. (United States)
Scott C. Burkhart, Lawrence Livermore National Lab. (United States)
Charles J. Cerjan, Lawrence Livermore National Lab. (United States)
Patrick A. Kearney, Lawrence Livermore National Lab. (United States)
Craig E. Moore, Lawrence Livermore National Lab. (United States)
Shon T. Prisbrey, Lawrence Livermore National Lab. (United States)
Donald W. Sweeney, Lawrence Livermore National Lab. (United States)
William M. Tong, Lawrence Livermore National Lab. (United States)
Stephen P. Vernon, Lawrence Livermore National Lab. (United States)
Christopher C. Walton, Lawrence Livermore National Lab. (United States)
Abbie L. Warrick, Lawrence Livermore National Lab. (United States)
Frank J. Weber, Lawrence Livermore National Lab. (United States)
Marco Wedowski, Lawrence Livermore National Lab. (Germany)
Karl Child Wilhelmsen, Lawrence Livermore National Lab. (United States)
Jeffrey Bokor, Lawrence Berkeley National Lab. and Univ. of California/Berkeley (United States)
Sungho Jeong, Lawrence Berkeley National Lab. (South Korea)
Gregory Frank Cardinale, Sandia National Labs. (United States)
Avijit K. Ray-Chaudhuri, Sandia National Labs. (United States)
Alan R. Stivers, Intel Corp. (United States)
Edita Tejnil, Intel Corp. (United States)
Pei-yang Yan, Intel Corp. (United States)
Scott Daniel Hector, Motorola (United States)
Khanh B. Nguyen, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 3665:
15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98
Uwe F. W. Behringer, Editor(s)

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