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Proceedings Paper

Development of an inductively coupled plasma etching system for 230-mm reticles
Author(s): David A. Klein; John Donohue
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Paper Abstract

The improved economics of larger chip/die sizes combined with the transition to 300 nm wafers will drive the photomask industry into the use of 230 mm reticles. This conversion is also anticipated to occur simultaneously with the introduction of automated mask handling and at the 0.15 micrometers to 0.13 micrometers technology generations requiring improved CD uniformities and smaller defect sizes. This paper will describe the development of a large area inductively coupled plasma source capable of processing 230 mm reticles. The use of Langmuir probe measurements performed on a fully adjustable prototype source with the intent to arrive at an optimum design for generation of a high density and uniform plasma will be discussed. An overview of an automated front end capable of handling both 6 inch and 230 mm reticles will be reviewed. The high plasma density along with independent ion energy control and low- pressure operation make inductively coupled plasma technology well suited to met the requirements of future wafer level generations. The use of a custom configurable cluster tool with an automated front end enables this system to adapt to the individual requirements of each photomask manufacturability facility.

Paper Details

Date Published: 23 April 1999
PDF: 5 pages
Proc. SPIE 3665, 15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98, (23 April 1999); doi: 10.1117/12.346220
Show Author Affiliations
David A. Klein, Plasma-Therm, Inc. (United States)
John Donohue, Plasma-Therm, Inc. (United States)

Published in SPIE Proceedings Vol. 3665:
15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98
Uwe F. W. Behringer, Editor(s)

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