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Proceedings Paper

Geometrical E-beam proximity correction for raster scan systems
Author(s): Nikola Belic; Hans Eisenmann; Hans Hartmann; Thomas Waas
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Paper Abstract

High pattern fidelity is a basic requirement for the generation of masks containing sub micro structures and for direct writing. Increasing needs mainly emerging from OPC at mask level and x-ray lithography require a correction of the e-beam proximity effect. The most part of e-beam writers are raster scan system. This paper describes a new method for geometrical pattern correction in order to provide a correction solution for e-beam system that are not able to apply variable doses.

Paper Details

Date Published: 23 April 1999
PDF: 3 pages
Proc. SPIE 3665, 15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98, (23 April 1999); doi: 10.1117/12.346218
Show Author Affiliations
Nikola Belic, aiss GmbH (Germany)
Hans Eisenmann, aiss GmbH (Germany)
Hans Hartmann, aiss GmbH (Germany)
Thomas Waas, aiss GmbH (Germany)


Published in SPIE Proceedings Vol. 3665:
15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98
Uwe F. W. Behringer, Editor(s)

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