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Proceedings Paper

Determination of residual stress and elastic constants of silicon open stencil masks for ion projection lithography
Author(s): Artur Degen; Feng Shi; Eva Sossna; R. Sunyk; Joachim Voigt; Burkhard E. Volland; B. Reinker; Ivo W. Rangelow
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Paper Abstract

The Ion Projection Lithography is one challenge for a semiconductor technology, starting with sub micron structures, which are beyond the facilities of conventional UV lithography. Within this field of research one of the most critical aspects is the development of stencil mask, because the stress formation during the various process steps affects the critical dimensions of the structures to be written. In this paper different methods for the determination of residual stress and elastic constants of thin membranes of doped silicon are reviewed and additionally, a novel technique is presented. First experimental result show, that they are quite different from the values of the bulk material.

Paper Details

Date Published: 23 April 1999
PDF: 10 pages
Proc. SPIE 3665, 15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98, (23 April 1999); doi: 10.1117/12.346213
Show Author Affiliations
Artur Degen, Univ. Kassel (Germany)
Feng Shi, Univ. Kassel (Germany)
Eva Sossna, Univ. Kassel (Germany)
R. Sunyk, Univ. Kassel (Germany)
Joachim Voigt, Univ. Kassel (Germany)
Burkhard E. Volland, Univ. Kassel (Germany)
B. Reinker, Univ. Kassel (Germany)
Ivo W. Rangelow, Univ. Kassel (Germany)


Published in SPIE Proceedings Vol. 3665:
15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98
Uwe F. W. Behringer, Editor(s)

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