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Proceedings Paper

Development of an algorithm for monitoring pattern fidelity on photomasks for 0.2-μm technology and beyond based on light optical CD metrology tools
Author(s): Thomas Schaetz; Bernd Hay; Lars Walden; Wolfram Ziegler
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Paper Abstract

With the ongoing shrinking of design rules, the complexity of photomasks does increase continuously. Features are getting smaller and denser, their characterization requires sophisticated procedures. Looking for the deviation from their target value and their linewidth variation is not sufficient any more. In addition, measurements of corner rounding and line end shortening are necessary to define the pattern fidelity on the mask. Otherwise printing results will not be satisfying. Contacts and small features are suffering mainly from imaging inaccuracies. The size of the contacts as an example may come out too small on the photomask and therefore reduces the process window in lithography. In order to meet customer requirements for pattern fidelity, a measurement algorithm and a measurement procedure needs to be introduced and specifications to be defined. In this paper different approaches are compared, allowing an automatic qualification of photomask by optical light microscopy based on a MueTec CD-metrology system, the newly developed MueTec 2030UV, provided with a 365 nm light source. The i-line illumination allows to resolve features down to 0.2 micrometers size with good repeatability.

Paper Details

Date Published: 23 April 1999
PDF: 9 pages
Proc. SPIE 3665, 15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98, (23 April 1999); doi: 10.1117/12.346210
Show Author Affiliations
Thomas Schaetz, Siemens AG (Germany)
Bernd Hay, Siemens AG (Germany)
Lars Walden, MueTec GmbH (Germany)
Wolfram Ziegler, Siemens AG (Germany)


Published in SPIE Proceedings Vol. 3665:
15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98
Uwe F. W. Behringer, Editor(s)

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