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Proceedings Paper

Pattern placement metrology tool matching within DPI's sites
Author(s): Norbert Talene; Klaus-Dieter Roeth
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Paper Abstract

The requirements of the 0.18 micrometers and 0.25 micrometers technologies lead to advanced specifications for the mask making technology in terms of pattern placement metrology, tighter than 52nm for the 0.25 micrometers generation and around 35nm for the next 0.18 micrometers generation. In addition, the tremendous demand regarding cycle time reduction, performance to delivery schedule, and technical complexity on products impose to the mask manufacturer like Dupont Photomasks Inc. (DPI) the necessity to mix and match products between all the DPI sites. From this perspective, the matching of all the pattern placement metrology tools of all DPI production sites is mandatory. In order to control the tight specifications, the strategy for metrology is to implement a unique grid for registration on a world wide base at DPI and to calibrate all metrology tools and all writing tools to this standard grid. All investigations were performed on the LEICA LMS IPRO tools using the new correction software form Leica Microsystems.

Paper Details

Date Published: 23 April 1999
PDF: 4 pages
Proc. SPIE 3665, 15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98, (23 April 1999); doi: 10.1117/12.346209
Show Author Affiliations
Norbert Talene, DuPont Photomasks SA (France)
Klaus-Dieter Roeth, Leica Microsystems Wetzlar GmbH (Germany)


Published in SPIE Proceedings Vol. 3665:
15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98
Uwe F. W. Behringer, Editor(s)

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